IGC11T120T6L igbt equivalent, igbt.
* 1200V Trench + Field Stop technology
* low switching losses
* positive temperature coefficient
* easy paralleling
This chip is used for:
* low / m.
* low / medium power drives
C G
E
Chip Type IGC11T120T6L
VCE 1200V
ICn 8A
Die Size 3.48 x 3.19 mm2
Package sa.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 .
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