Datasheet Details
| Part number | IGI60F2020A1L |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.24 MB |
| Description | IPS |
| Datasheet | IGI60F2020A1L-Infineon.pdf |
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Overview: CoolGaNTM Integrated Power Stage (IPS) IGI60F2020A1L 200 m / 600 V GaN half-bridge with fast accurate isolated gate.
| Part number | IGI60F2020A1L |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.24 MB |
| Description | IPS |
| Datasheet | IGI60F2020A1L-Infineon.pdf |
|
|
|
IGI60F2020A1L combines a half-bridge power stage consisting of two 200 m (typ.
Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.
In the low-to-medium power area (example application in Figure 1) it is thus ideally suited to support the design of high-density AC/DC chargers and adapters utilizing the superior switching behavior of CoolGaNTM HEMTs.
Compare IGI60F2020A1L distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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