IGI60L5050A1M Description
IGI60L5050A1M bines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package. In the low-to-medium power area (example configuration in Figure 1), it is thus ideally suited to support the design of high-density motor drives and SMPS utilizing the superior switching behavior of CoolGaNTM power switches.
IGI60L5050A1M Key Features
- Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers
- Source / sink driving current +0.29 A / -0.7 A
- Application-configurable turn-on and turn-off speed
- Integrated ultra-fast low-resistance bootstrap diode
- Fast input-to-output propagation (typ. 98 ns) with extremely small channel-tochannel mismatch
- PWM input signal
- Standard logic input levels patible with digital controllers
- Single gate driver supply voltage (typ. 12 V) with fast UVLO recovery
- Low-side open source for current sensing with external shunt resistor
- Thermally enhanced 6 x 8 mm TFLGA-27 package