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IGI60L5050A1M Datasheet IPS / 600V GaN half-bridge

Manufacturer: Infineon

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General Description

IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ.

Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package.

In the low-to-medium power area (example configuration in Figure 1), it is thus ideally suited to support the design of high-density motor drives and SMPS utilizing the superior switching behavior of CoolGaNTM power switches.

Overview

CoolGaNTM Integrated Power Stage (IPS) IGI60L5050A1M 500 m / 600 V GaN half-bridge with level-shift gate.

Key Features

  • Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A -.

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