Datasheet Details
| Part number | IGI60F2020A1L |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.24 MB |
| Description | IPS |
| Download | IGI60F2020A1L Download (PDF) |
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| Part number | IGI60F2020A1L |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.24 MB |
| Description | IPS |
| Download | IGI60F2020A1L Download (PDF) |
|
|
|
IGI60F2020A1L combines a half-bridge power stage consisting of two 200 m (typ.
Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.
In the low-to-medium power area (example application in Figure 1) it is thus ideally suited to support the design of high-density AC/DC chargers and adapters utilizing the superior switching behavior of CoolGaNTM HEMTs.
CoolGaNTM Integrated Power Stage (IPS) IGI60F2020A1L 200 m / 600 V GaN half-bridge with fast accurate isolated gate.
| Part Number | Description |
|---|---|
| IGI60F2727A1L | IPS / 600V GaN half-bridge |
| IGI60F1414A1L | IPS / 600V GaN half-bridge |
| IGI60F5050A1L | IPS / 600V GaN half-bridge |
| IGI60L2727B1M | 600V GaN half-bridge |
| IGI60L5050A1M | IPS / 600V GaN half-bridge |
| IGI65D1414A3MS | Dual 650V Transistor |