IGI60F2727A1L Description
IGI60F2727A1L bines a half-bridge power stage consisting of two 270 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Figure 1) it is thus ideally suited to support the design of high-density AC/DC chargers and adapters utilizing the superior switching behavior of CoolGaNTM HEMTs.
IGI60F2727A1L Key Features
- Two 270 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers
- Source / sink driving current up to 1 / 2 A
- Application-configurable turn-on and turn-off speed
- Fast input-to-output propagation (typ. 47 ns) with extremely small channel-tochannel mismatch
- PWM input signal (switching frequency up to 3 MHz)
- Standard logic input levels patible with digital controllers
- Wide supply range
- Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery
- Low-side open source for current sensing with external shunt resistor
- Galvanic input-to-output isolation based on robust coreless transformer technology