* TRENCHSTOPTM technology offering
* best in class switching performance: less than 500µJ total switching losses achievable
* very low VCEsat
* low EMI
* maximum junction temperature 175°C
* qualified according to JEDEC for target applications
* Pb-fre
IGW40N120H3 Datasheet (1.82 MB)
IGW40N120H3
1.82 MB
Igbt.
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW40N120H3 1200V high speed switching ser.
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