* C High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low gate charge QG
* IGBT copacked with RAPID 1 fast and soft antiparallel diode
* Maximum junction temperature 175°C
IKW40N65F5A Datasheet (2.08 MB)
IKW40N65F5A
2.08 MB
Igbt.
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW40N65F5A 650V DuoPack IGBT and diod.
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