* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased
IMBG65R022M1H Datasheet (1.34 MB)
IMBG65R022M1H
1.34 MB
Mosfet.
Public IMBG65R022M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology devel.
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