IMW120R007M1H - MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMW120R007M1H
Manufacturer	Infineon
File Size	1.21 MB
Description	MOSFET
Datasheet	IMW120R007M1H Datasheet
Additional preview pages of the IMW120R007M1H datasheet.

Product details

Description

1 gate 2 drain 3 source TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 225 A at Tc = 25°C.
RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance Potential.

📁 Similar Datasheet

Other Datasheets by Infineon

IMW120R020M1H - 1200V SiC Trench MOSFET
IMW120R030M1H - Silicon Carbide MOSFET
IMW120R040M1H - 1200V SiC Trench MOSFET
IMW120R045M1 - 1200V SiC Trench MOSFET
IMW120R060M1H - Silicon Carbide MOSFET
IMW120R090M1H - Silicon Carbide MOSFET

Published: Aug 10, 2023 |