Datasheet4U Logo Datasheet4U.com

IMW120R007M1H Datasheet MOSFET

Manufacturer: Infineon

Overview: IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide.

General Description

1 – gate 2 – drain 3 – source TO-247 – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description .

.

.

Key Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 225 A at Tc = 25°C.
  • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance Potential.

More Datasheets from Infineon

Part Number Description
IMW120R020M1H 1200V SiC Trench MOSFET
IMW120R030M1H Silicon Carbide MOSFET
IMW120R040M1H 1200V SiC Trench MOSFET
IMW120R045M1 1200V SiC Trench MOSFET
IMW120R060M1H Silicon Carbide MOSFET
IMW120R090M1H Silicon Carbide MOSFET
IMW120R140M1H Silicon Carbide MOSFET
IMW120R220M1H Silicon Carbide MOSFET
IMW120R350M1H 1200V SiC Trench MOSFET
IMW65R007M2H MOSFET

IMW120R007M1H Distributor