IMW120R040M1H Datasheet | Infineon

Features - VDSS = 1200 V at Tvj = 25°C - IDDC = 55 A at TC = 25°C - RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C - Very low switching losses - Short circuit withstand time 3 µs - Benchmark gate threshold voltage, VGS(th) = 4.2 V - Robust against parasitic turn on, 0 V turn-off gate voltage can be applied - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance Potential applications - Industrial drives - Industrial power supplies - Solar inverters Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 - Please also note the application note AN2019-05 for power and thermal cycling Description - Gate 2 - Drain 3 - Source TO-247 - 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R040M1H Package PG-TO247-3-U06 Marking 12M1H040 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.40 2024-11-15 Cool Si C™ 1200 V Si C Trench MOSFET Table of contents Table of contents Description - - - - - - -...