Datasheet Details
| Part number | IMW120R045M1 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.35 MB |
| Description | 1200V SiC Trench MOSFET |
| Datasheet |
 IMW120R045M1 Datasheet
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Key Features
- Very low switching losses Gate.
- Threshold-free on state characteristic pin 1.
- Wide gate-source voltage range.
- Benchmark gate threshold voltage, VGS(th) = 4.5V.
- 0V turn-off gate voltage.
- Fully controllable dv/dt.
- Commutation robust body diode, ready for synchronous rectification.
- Temperature independent turn-off switching losses Benefits.
- Efficiency improvement.
- Enabling higher frequency.
- Increased power density.
- Cooling effo.