IMW120R045M1 - 1200V SiC Trench MOSFET

Features

Very low switching losses Gate.
Threshold-free on state characteristic pin 1.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling effo.

Infineon

Datasheet Details

Part number	IMW120R045M1
Manufacturer	Infineon
File Size	1.35 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R045M1 Datasheet
Additional preview pages of the IMW120R045M1 datasheet.

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Full PDF Text Transcription

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IMW120R045M1 IMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate  Threshold-free on state characteristic pin 1  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.

Published: Sep 25, 2019 |