IMW120R045M1
IMW120R045M1 is 1200V SiC Trench MOSFET manufactured by Infineon.
Features
- Very low switching losses
Gate
- Threshold-free on state characteristic pin 1
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential applications
- Energy generation o Solar string inverter and solar optimizer
- Industrial power supplies o Industrial UPS o Industrial SMPS
- Infrastructure
- Charge o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Drain pin 2
Source pin 3
Table 1
Key Performance and Package Parameters
Type IMW120R045M1
VDS 1200V
(TC = 25°C, Rth(j-c,max))
52A
RDS(on)
(Tvj = 25°C, ID = 20A, VGS = 15V)
45mΩ
Tj,max 175°C
Marking 120M1045
Package PG-TO247-3
Please read the Important Notice and Warnings at the end of this document
.infineon. page 1 of...
