IMW120R045M1 Overview
IMW120R045M1 IMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET.
IMW120R045M1 Key Features
- Very low switching losses
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- 0V turn-off gate voltage
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
- Efficiency improvement
- Enabling higher frequency