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IMW120R020M1H - 1200V SiC Trench MOSFET

General Description

1 gate 2 drain 3 source TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Package PG-TO247-3-U06 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this docume

Key Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 98 A at TC = 25°C.
  • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Short circuit withstand time 3 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance Potential.

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IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 98 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .