IMW120R020M1H
IMW120R020M1H is 1200V SiC Trench MOSFET manufactured by Infineon.
Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 98 A at TC = 25°C
- RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Short circuit withstand time 3 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
Potential applications
- General purpose drives (GPD)
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- Solar power optimizer
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Please also note the application note AN2019-05 for power and thermal cycling
Description
- gate 2
- drain 3
- source
TO-247
- 3Pin
2021-10-27 restricted
Copyright © Infineon T
Type IMW120R020M1H
Package PG-TO247-3-U06
Marking 12M1H020
Datasheet .infineon.
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.40 2024-11-15
Cool Si C™ 1200 V Si C Trench MOSFET
Table of contents
Table of contents
Description
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