IMW120R007M1H Description
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-05-08 IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description.
IMW120R007M1H Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 225 A at Tc = 25°C
- RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance Potential