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IMW120R007M1H - MOSFET

Description

1 gate 2 drain 3 source TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this

Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 225 A at Tc = 25°C.
  • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance Potential.

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Datasheet Details

Part number IMW120R007M1H
Manufacturer Infineon
File Size 1.21 MB
Description MOSFET
Datasheet download datasheet IMW120R007M1H Datasheet
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IMW120R007M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 225 A at Tc = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .
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