Datasheet Summary
CoolSiC™ 1200 V SiC Trench MOSFET
Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 98 A at TC = 25°C
- RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Short circuit withstand time 3 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
Potential applications
- General purpose drives (GPD)
- EV Charging
- Online UPS/Industrial UPS
- String inverter
- Solar power optimizer
Product validation
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