IMW120R020M1H - 1200V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMW120R020M1H
Manufacturer	Infineon
File Size	1.28 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R020M1H Datasheet
Additional preview pages of the IMW120R020M1H datasheet.

Product details

Description

1 gate 2 drain 3 source TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Package PG-TO247-3-U06 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.40 2024-11-15 IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 98 A at TC = 25°C.
RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Short circuit withstand time 3 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance Potential.

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Published: Aug 19, 2023 |