* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMW65R020M2H Datasheet (1.48 MB)
IMW65R020M2H
1.48 MB
Mosfet.
IMW65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET d.
📁 Related Datasheet
IMW65R026M2H 650V SiC MOSFET (Infineon)
IMW65R027M1H 650V MOSFET (Infineon)
IMW65R007M2H MOSFET (Infineon)
IMW65R010M2H SiC MOSFET (Infineon)
IMW65R015M2H MOSFET (Infineon)
IMW65R030M1H 650V MOSFET (Infineon)
IMW65R039M1H 650V MOSFET (Infineon)
IMW65R040M2H MOSFET (Infineon)
IMW65R048M1H 650V MOSFET (Infineon)
IMW65R050M2H MOSFET (Infineon)
