IMW65R010M2H
IMW65R010M2H is SiC MOSFET manufactured by Infineon.
Features
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
- Flexible driving voltage and patible with bipolar driving scheme
- Robust body diode operation under hard mutation events
- .XT interconnection technology for best‑in‑class thermal performance
Benefits
- Enables high efficiency and high power density designs
- Facilitates great ease of use and integration
- Provides the best price performance ratio pared to Industry’s most ambitious roadmaps
- Reduces the size, weight and bill of materials of the systems
- Enhances system robustness and reliability
Potential applications
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDSS over full Tj,range
RDS(on),typ
10.0 mΩ
RDS(on),max
13.1 mΩ
QG,typ
112 n C
ID,pulse
Qoss @ 400 V
212 n C
Eoss @ 400...
