IMW65R020M2H - MOSFET

Description

Features

Ultra-low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust against parasitic turn-on even with 0 V turn-off gate voltage.
Flexible driving voltage and compatible with bipolar driving scheme.
Robust body diode operation under hard commutation events.
. XT interconnection technology for best-in-class thermal performance Benefits.
Enables high efficiency and high power density designs.
Facilitates gre.

Infineon

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Datasheet Details

Part number	IMW65R020M2H
Manufacturer	Infineon
File Size	1.48 MB
Description	MOSFET
Datasheet	IMW65R020M2H Datasheet
Additional preview pages of the IMW65R020M2H datasheet.

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Full PDF Text Transcription

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IMW65R020M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETdeliversunparalleledperformance, superiorreliability,andgreateaseofuse.Itenablescosteffective,highly efficient,andsimplifieddesignstofulfilltheever-growingsystemand marketneeds. Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •.

Published: Apr 25, 2024 |