Datasheet Details
| Part number | IMW65R007M2H |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.46 MB |
| Description | MOSFET |
| Datasheet |
 IMW65R007M2H Datasheet
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General Description
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Key Features
- Ultra-low switching losses.
- Benchmark gate threshold voltage, VGS(th) = 4.5 V.
- Robust against parasitic turn-on even with 0 V turn-off gate voltage.
- Flexible driving voltage and compatible with bipolar driving scheme.
- Robust body diode operation under hard commutation events.
- . XT interconnection technology for best-in-class thermal performance Benefits.
- Enables high efficiency and high power density designs.
- Facilitates gre.