IMW65R027M1H - 650V MOSFET

Description

1 Maximum ratings 3 T

Features

Optimized switching behavior at higher currents.
Commutation robust fast body diode with low Qfr.
Superior gate oxide reliability.
Tj,max=175°C and excellent thermal behavior.
Lower RDS(on) and pulse current dependency on temperature.
Increased avalanche capability.
Compatible with standard drivers.
Kelvin source provides up to 4 times lower switching losses Benefits.
Unique combination of high performance, high re.

Infineon

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Datasheet Details

Part number	IMW65R027M1H
Manufacturer	Infineon
File Size	1.09 MB
Description	650V MOSFET
Datasheet	IMW65R027M1H Datasheet
Additional preview pages of the IMW65R027M1H datasheet.

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Full PDF Text Transcription

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Public IMW65R027M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Published: Aug 10, 2023 |