IMW65R040M2H
IMW65R040M2H is MOSFET manufactured by Infineon.
Features
- Ultra-lowswitchinglosses
- Benchmarkgatethresholdvoltage,VGS(th)=4.5V
- Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
- Flexibledrivingvoltageandpatiblewithbipolardrivingscheme
- Robustbodydiodeoperationunderhardmutationevents
- .XTinterconnectiontechnologyforbest-in-classthermalperformance
Benefits
- Enableshighefficiencyandhighpowerdensitydesigns
- Facilitatesgreateaseofuseandintegration
- Providesthebestpriceperformanceratioparedto Industry’smost ambitiousroadmaps
- Reducesthesize,weightandbillofmaterialsofthesystems
- Enhancessystemrobustnessandreliability
Potentialapplications
- SMPS
- Solar PVinverters
- Energystorageandbatteryformation
- UPS
- EVcharginginfrastructure
- Motordrives
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
PG-TO247-3
Tab
1 2 3
Drain Pin 2, Tab
Gate
- 1
Pin 1
Source
- 1: Internal body diode Pin 3
Table1Key Performance Parameters
Parameter
Value
Unit
VDSSoverfull Tj,range 650
RDS(on),typ
40...
