| Description | 1 – gate 2 – drain 3 – source TO-247 HCC – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1450 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-03-25 IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Table of contents Table of contents Descrip... |
| Features |
• VDSS = 1700 V at Tvj = 25°C • IDDC = 10 A at TC = 25°C • RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Fully controllable dv/dt for EMI optimization • .XT int... |
| Datasheet |
 IMWH170R450M1 Datasheet - 1.37MB |
