IMWH170R650M1 Description
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2025-03-22 IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Table of contents Table of contents Description.
IMWH170R650M1 Key Features
- VDSS = 1700 V at Tvj = 25°C
- IDDC = 7.5 A at TC = 25°C
- RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
- Optimized for fly-back topologies
- 12 V / 0 V gate-source voltage patible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Fully controllable dv/dt for EMI optimization
- XT interconnection technology for best-in-class thermal performance