IMWH170R650M1
IMWH170R650M1 is 1700V SiC Trench MOSFET manufactured by Infineon.
CoolSiC™ 1700 V SiC Trench MOSFET
Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features
- VDSS = 1700 V at Tvj = 25°C
- IDDC = 7.5 A at TC = 25°C
- RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C
- Optimized for fly-back topologies
- 12 V / 0 V gate-source voltage patible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Fully controllable dv/dt for EMI optimization
- .XT interconnection technology for best-in-class thermal performance
Potential applications
- General purpose drives (GPD)
- EV Charging
- Energy storage systems (ESS)
- String inverter
- Uninterruptible power...
