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IMWH170R450M1 - Silicon Carbide MOSFET

Description

1 gate 2 drain 3 source TO-247 HCC 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1450 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of th

Features

  • VDSS = 1700 V at Tvj = 25°C.
  • IDDC = 10 A at TC = 25°C.
  • RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C.
  • Optimized for fly-back topologies.
  • 12 V / 0 V gate-source voltage compatible with most fly-back controllers.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Fully controllable dv/dt for EMI optimization.
  • . XT interconnection technology for best-in-class thermal performance Potential applic.

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Datasheet Details

Part number IMWH170R450M1
Manufacturer Infineon
File Size 1.37 MB
Description Silicon Carbide MOSFET
Datasheet download datasheet IMWH170R450M1 Datasheet
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IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V at Tvj = 25°C • IDDC = 10 A at TC = 25°C • RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Fully controllable dv/dt for EMI optimization • .
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