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IMWH170R450M1 Datasheet Silicon Carbide MOSFET

Manufacturer: Infineon

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General Description

1 – gate 2 – drain 3 – source TO-247 HCC – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R450M1 Package PG-TO247-3-STD-NN4.8 Marking 170M1450 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-03-25 IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Table of contents Table of contents Description .

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Overview

IMWH170R450M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide.

Key Features

  • VDSS = 1700 V at Tvj = 25°C.
  • IDDC = 10 A at TC = 25°C.
  • RDS(on) = 450 mΩ at VGS = 12 V, Tvj = 25°C.
  • Optimized for fly-back topologies.
  • 12 V / 0 V gate-source voltage compatible with most fly-back controllers.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Fully controllable dv/dt for EMI optimization.
  • . XT interconnection technology for best-in-class thermal performance Potential applic.

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