IMWH170R650M1 - 1700V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMWH170R650M1
Manufacturer	Infineon
File Size	1.55 MB
Description	1700V SiC Trench MOSFET
Datasheet	IMWH170R650M1 Datasheet
Additional preview pages of the IMWH170R650M1 datasheet.

Product details

Description

Package pin definition: Pin 1 Gate Pin 2 & backside Drain Pin 3 Source TO-247 HCC 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R650M1 Package PG-TO247-3-U04 Marking 170M1650 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2025-03-22 IMWH170R650M1 CoolSiC™ 1700 V SiC Trench MOSFET Table of contents Table of contents Desc

Features

VDSS = 1700 V at Tvj = 25°C.
IDDC = 7.5 A at TC = 25°C.
RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C.
Optimized for fly-back topologies.
12 V / 0 V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Fully controllable dv/dt for EMI optimization.
. XT interconnection technology for best-in-class thermal performance Potential appli.

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Published: May 13, 2024 |