IMWH170R650M1 Datasheet - Infineon

1700V SiC Trench MOSFET

IMWH170R650M1 Features

* VDSS = 1700 V at Tvj = 25°C

* IDDC = 7.5 A at TC = 25°C

* RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C

* Optimized for fly-back topologies

* 12 V / 0 V gate-source voltage compatible with most fly-back controllers

* Very low switching losses

IMWH170R650M1 General Description

Package pin definition: * Pin 1 * Gate * Pin 2 & backside * Drain * Pin 3 * Source TO-247 HCC * 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R650M1 Package PG-TO247-3-U04 Marking 170M1650 Datasheet www.infineon.com Plea.

IMWH170R650M1 Datasheet (1.55 MB)

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Datasheet Details

Part number:

IMWH170R650M1

Manufacturer:

Infineon ↗

File Size:

1.55 MB

Description:

1700v sic trench mosfet.

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IMWH170R650M1 1700V SiC Trench MOSFET Infineon

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IMWH170R650M1 Features

IMWH170R650M1 General Description

Datasheet Details

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