Datasheet Summary
CoolSiC™ 2000 V SiC Trench MOSFET
CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology
Features
- VDSS = 2000 V at Tvj = 25°C
- IDCC = 34 A at Tc = 25°C
- RDS(on) = 75 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
2021-10-27 restricted
Copyright © Infineon Technologies AG 2021. All rights reserved.
Potential applications
- String inverter
- Solar power optimizer
- EV-Charging
Product validation
- Qualified for industrial applications according to...