IMZA120R014M1H Datasheet - Infineon

MOSFET

IMZA120R014M1H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 127 A at Tc = 25°C

* RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Short circuit withstand time 3 µs

* Benchmark gate threshold voltage, VGS(th) = 4.2 V

* Robust against parasitic

IMZA120R014M1H General Description

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R014M1H Package PG-TO247-4-STD-NT3.7 Marking 12M.

IMZA120R014M1H Datasheet (1.40 MB)

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Datasheet Details

Part number:

IMZA120R014M1H

Manufacturer:

Infineon ↗

File Size:

1.40 MB

Description:

Mosfet.
IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat.

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IMZA120R014M1H Features

IMZA120R014M1H General Description

Datasheet Details

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