IMZA120R022M2H Description
1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R022M2H Package PG-TO247-4-U02 Marking 12M2H022 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-25 IMZA120R022M2H CoolSiC™ 1200 V SiC MOSFET G2 Table of...
IMZA120R022M2H Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 57 A at TC = 100°C
- RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance