IMZA120R022M2H - 1200V SiC MOSFET

Infineon

Datasheet Details

Part number	IMZA120R022M2H
Manufacturer	Infineon
File Size	1.45 MB
Description	1200V SiC MOSFET
Datasheet	IMZA120R022M2H Datasheet

General Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R022M2H Package PG-TO247-4-U02 Marking 12M2H022 Datasheet www.infineon.com

Overview

IMZA120R022M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .

Key Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 57 A at TC = 100°C.
RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-.

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