IMZA120R020M1H Description
1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2024-11-15 IMZA120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description.
IMZA120R020M1H Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 98 A at TC = 25°C
- RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Short circuit withstand time 3 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance