IMZA120R014M1H - 1200V SiC Trench MOSFET

Infineon

Datasheet Details

Part number	IMZA120R014M1H
Manufacturer	Infineon
File Size	1.40 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMZA120R014M1H Datasheet

General Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R014M1H Package PG-TO247-4-U02 Marking 12M1H014

Overview

IMZA120R014M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .

Key Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 127 A at TC = 25°C.
RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Short circuit withstand time 3 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance TO-247-4.
4.

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