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Infineon Technologies Electronic Components Datasheet

IPB120N06S4-02 Datasheet

Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Product Summary
V DS
R DS(on),max (SMD version)
ID
60 V
2.4 m
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N06S4-02
IPI120N06S4-02
IPP120N06S4-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0602
4N0602
4N0602
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
120
120
480
560
120
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
Downloaded from Elcodis.com electronic components distributor
page 1
2009-07-01


Infineon Technologies Electronic Components Datasheet

IPB120N06S4-02 Datasheet

Power-Transistor

No Preview Available !

IPB120N06S4-02
IPI120N06S4-02, IPP120N06S4-02
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.8 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
60 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=140µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=60V, V GS=0V
- 0.01 1 µA
V DS=60V, V GS=0V,
T j=125°C2)
-
10 200
Gate-source leakage current
Drain-source on-state resistance
I GSS
R DS(on)
V GS=20V, V DS=0V
V GS=10V, I D=100A
- - 100 nA
- 2.4 2.8 m
V GS=10V, I D=100A,
SMD version
-
2.0 2.4
Rev. 1.2
Downloaded from Elcodis.com electronic components distributor
page 2
2009-07-01


Part Number IPB120N06S4-02
Description Power-Transistor
Maker Infineon
Total Page 9 Pages
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