Datasheet Details
| Part number | IPC26N12N |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.87 MB |
| Description | MOSFET |
| Download | IPC26N12N Download (PDF) |
|
|
| Part number | IPC26N12N |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.87 MB |
| Description | MOSFET |
| Download | IPC26N12N Download (PDF) |
|
|
|
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP048N12N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 120 4.81) 6.6 x 3.96 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC26N12N Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD Min.
120 2 - Values Typ.
Max.
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC26N12N DataSheet Rev.2.
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