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IPC26N12N - MOSFET

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Part number IPC26N12N
Manufacturer Infineon
File Size 1.87 MB
Description MOSFET
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N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP048N12N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlSi system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Perfo

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