IPD090N03LGE8177 - MOSFET

Description

Features

Fast switching MOSFET for SMPS.
Optimized technology for DC/DC converters.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPD090N03LGE8177
Manufacturer	Infineon
File Size	0.98 MB
Description	MOSFET
Datasheet	IPD090N03LGE8177 Datasheet
Additional preview pages of the IPD090N03LGE8177 datasheet.

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IPD090N03LGE8177 MOSFET OptiMOSª3Power-Transistor,30V Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 9 mΩ ID 40 A DPAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD090N03L G E8177 Package PG-TO252-3 Marking 090N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-09-14 OptiMOSª3Power-Transistor,30V IPD090N03LGE8177 TableofContents Description . . . . . . . . . . . . . . . . . . . .

Published: Feb 27, 2014 |