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IPD50N08S4-13 - Power-Transistor

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Infineon

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IPD50N08S4-13 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPD50N08S4-13

Datasheet Details

Part number	IPD50N08S4-13
Manufacturer	Infineon
File Size	267.78 KB
Description	Power-Transistor
Datasheet	IPD50N08S4-13 Datasheet
Additional preview pages of the IPD50N08S4-13 datasheet.

Product details

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD50N08S4-13 Product Summary VDS RDS(on),max ID 80 V 13.2 mW 50 A PG-TO252-3-313 Type IPD50N08S4-13 Package Marking PG-TO252-3-313 4N0813 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V.

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Published: Feb 15, 2016 |