• Part: IPD50N03S4L-06
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 131.66 KB
Download IPD50N03S4L-06 Datasheet PDF
IPD50N03S4L-06 page 2
Page 2
IPD50N03S4L-06 page 3
Page 3

Datasheet Summary

OptiMOS®-T2 Power-Transistor - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 V 5.5 mW 50 A PG-TO252-3-11 Type IPD50N03S4L-06 Package Marking PG-TO252-3-11 4N03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source voltage V GS - Power...