• Part: IPD50N04S3-09
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 179.23 KB
Download IPD50N04S3-09 Datasheet PDF
IPD50N04S3-09 page 2
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Datasheet Summary

OptiMOS®-T Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 V 9 mΩ 50 A PG-TO252-3-11 Type IPD50N04S3-09 Package Marking PG-TO252-3-11 3N0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=25 A Avalanche current, single pulse I AS Gate source voltage V...