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OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPD50N04S3-09
Product Summary V DS R DS(on),max ID
40 V 9 mΩ 50 A
PG-TO252-3-11
Type IPD50N04S3-09
Package
Marking
PG-TO252-3-11 3N0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN
IPD50N04S3-09 Datasheet
