• Part: IPD50N04S4-10
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 150.80 KB
Download IPD50N04S4-10 Datasheet PDF
IPD50N04S4-10 page 2
Page 2
IPD50N04S4-10 page 3
Page 3

Datasheet Summary

OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 V 9.3 mΩ 50 A PG-TO252-3-313 Type IPD50N04S4-10 Package Marking PG-TO252-3-313 4N0410 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power...