• Part: IPD50N04S3-08
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 181.43 KB
Download IPD50N04S3-08 Datasheet PDF
IPD50N04S3-08 page 2
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Datasheet Summary

OptiMOS®-T Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 V 7.5 mΩ 50 A PG-TO252-3-11 Type IPD50N04S3-08 Package Marking PG-TO252-3-11 3N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=50 A Gate source voltage V GS Power...