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IPD50N04S3-08 - Power Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • 100% Avalanche tested IPD50N04S3-08 Product Summary V DS R DS(on),max ID 40 V 7.5 mΩ 50 A PG-TO252-3-11 Type IPD50N04S3-08 Package Marking PG-TO252-3-11 3N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=.

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Datasheet Details

Part number IPD50N04S3-08
Manufacturer Infineon
File Size 181.43 KB
Description Power Transistor
Datasheet download datasheet IPD50N04S3-08 Datasheet
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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD50N04S3-08 Product Summary V DS R DS(on),max ID 40 V 7.
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