• Part: IPD50N04S4-08
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 151.47 KB
Download IPD50N04S4-08 Datasheet PDF
IPD50N04S4-08 page 2
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Datasheet Summary

OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 V 7.9 mΩ 50 A PG-TO252-3-313 Type IPD50N04S4-08 Package Marking PG-TO252-3-313 4N0408 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power...