Datasheet Summary
IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11
OptiMOS™-T Power-Transistor
Product Summary
Features
- OptiMOSTM
- power MOSFET for automotive applications
VDS RDS(on),max (SMD version) ID
120 V 11.3 mW 70 A
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
Type IPB70N12S3-11 IPI70N12S3-11 IPP70N12S3-11
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N1211 3N1211 3N1211
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25 °C, V GS=10 V
T C=100 °C,...