* Optimized for e-fuse and ORing application
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* Superior thermal resistance
* N-channel
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS
IPT004N03L Datasheet (1.06 MB)
IPT004N03L
1.06 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 30 V IPT004N03L Data Sheet Rev. 2.0 Final Power Management .
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