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IPT004N03L - MOSFET

Key Features

  • Optimized for e-fuse and ORing.

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Full PDF Text Transcription for IPT004N03L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPT004N03L. For precise diagrams, tables, and layout, please refer to the original PDF.

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket 1...

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04N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.4 mΩ ID 300 A QOSS 141 nC QG(0V..