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IPT111N20NFD - MOSFET

General Description

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Key Features

  • N-channel, normal level.
  • Fast Diode (FD) with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for IPT111N20NFD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPT111N20NFD. For precise diagrams, tables, and layout, please refer to the original PDF.

IPT111N20NFD MOSFET OptiMOSª3Power-Transistor,200V Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •...

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e(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 96 A HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT111N20NFD Package PG-HSOF-8 Marking 111N20NF RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD TableofCon