IRF5803PbF Datasheet | Infineon

  - Ultra Low On-Resistance - P-Channel MOSFET - Surface Mount - Available in Tape & Reel - Low Gate Charge - Lead-Free - Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on)...