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Infineon Technologies Electronic Components Datasheet

IRF5803PbF Datasheet

Power MOSFET

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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for use in
battery and load management applications.
The TSOP-6 package with its customized lead frame produces
a HEXFET® power MOSFET with RDS(on) 60% less than a
similar size SOT-23. This package is ideal for applications where
printed circuit board space is at a premium. It's unique thermal
design and RDS(on) reduction enables a current-handling
increase of nearly 300% compared to the SOT-23.
VDSS
- 40V
IRF5803PbF
HEXFET® Power MOSFET
RDS(on) (max)
112m@ VGS = -10V
190m@ VGS = -4.5V
ID
-3.4A
-2.7A
D1
6
A
D
D2
5D
G3
4S
Top View
G
Gate
D
Drain
TSOP-6
IRF5803PbF
S
Source
Base part number
IRF5803PbF
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRF5803TRPbF
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
PD @TA= 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
PD @TA= 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
-40
- 3.4
-2.7
- 27
2.0
1.3
16
± 20
-55 to + 150
Units
V
A 
W
mW/°C
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
1 2017-01-27


Infineon Technologies Electronic Components Datasheet

IRF5803PbF Datasheet

Power MOSFET

No Preview Available !

  IRF5803PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS  
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-40 ––– ––– V VGS = 0V, ID = -250µA
––– -0.03 ––– V/°C Reference to 25°C, ID = -1mA
–––
–––
–––
–––
112
190
mVVGGSS
=
=
-10V, ID = -3.4A
-4.5V, ID = -2.7A
-1.0 ––– - 3.0 V VDS = VGS, ID = -250µA
4.0 ––– ––– S VDS = -10V, ID = -3.4A
–––
–––
–––
–––
-10
-25
µA
VDS = -32V, VGS = 0V
VDS = -32V,VGS = 0V,TJ = 150°C
–––
–––
––– -100
––– 100
nA  
VGS = -20V
VGS = 20V
Qg Total Gate Charge
––– 25 37
ID = -3.4A
Qgs Gate-to-Source Charge
––– 4.5 6.8 nC   VDS = -20V
Qgd
Gate-to-Drain (‘Miller’) Charge
––– 3.5 5.3
VGS = -10V
td(on) Turn-On Delay Time
––– 43 –––
VDD = -20V
tr Rise Time
td(off) Turn-Off Delay Time
–––
–––
550 –––
88 –––
ns
ID = -1.0A
RG = 6.0
tf Fall Time
––– 50 –––
VGS = -10V
Ciss Input Capacitance
––– 1110 –––
VGS = 0V
Coss Output Capacitance
––– 93 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 73 –––
ƒ = 100KHz
Source-Drain Ratings and Characteristics 
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
27
34
Max. Units
Conditions
-2.0
-27
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
-1.2 V TJ = 25°C,IS = -2.0A,VGS = 0V 
40 ns TJ = 25°C ,IF = -2.0A
50 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
2 2017-01-27


Part Number IRF5803PbF
Description Power MOSFET
Maker Infineon
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IRF5803PbF Datasheet PDF






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International Rectifier
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