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IRL3803PBF - MOSFET

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Description

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number IRL3803PBF
Manufacturer Infineon
File Size 1.62 MB
Description MOSFET
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 Logic - Level Gate Drive  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.
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