IRL3803V Datasheet - International Rectifier

IRL3803V Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRL3803V Features

* 045) MIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92

IRL3803V-InternationalRectifier.pdf