IRL3803VL Datasheet - International Rectifier

IRL3803VL Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi.

IRL3803VL Features

* -Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak

IRL3803VL_InternationalRectifier.pdf