Datasheet Details
Part number:
IRL3803VL
Manufacturer:
International Rectifier
File Size:
247.41 KB
Description:
Power MOSFET
Features
* -Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak
IRL3803VL_InternationalRectifier.pdf
IRL3803VL, Power MOSFET
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi
IRL3803VL Distributor
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