IRL3803VSPBF Datasheet (International Rectifier)

IRL3803VSPBF, Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides t

IRL3803VSPBF Features

* .U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline