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IRL3803VLPbF

Power MOSFET

IRL3803VLPbF Features

* .U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline

IRL3803VLPbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides t.

IRL3803VLPbF Datasheet (270.41 KB)

Preview of IRL3803VLPbF PDF

Datasheet Details

Part number:

IRL3803VLPbF

Manufacturer:

International Rectifier

File Size:

270.41 KB

Description:

Power mosfet.
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temper.

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IRL3803VLPbF Power MOSFET International Rectifier

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