IRL3803VPBF Datasheet - International Rectifier

IRL3803VPBF HEXFET Power MOSFET

l D VDSS = 30V RDS(on) = 5.5mΩ G S ID = 140A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET.

IRL3803VPBF Features

* T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C TO-220AB package is not recommended for Surface Mount Application. Data and specifi

IRL3803VPBF_InternationalRectifier.pdf