Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 23
1.15 (.04 5) M IN
1 4.09 (.5 55) 1 3.47 (.5 30)
4.06 (.160) 3.55 (.140)
4 .69 (.18 5) 4 .20 (.16 5)
-B-
1.3 2 (.05 2) 1.2 2 (.04 8)
LE A D A S S IG N M E N TS 1 - GATE 2 - D R A IN 3 - SOURCE 4 - D R A IN
3X
1 .40 (.05 5) 1 .15 (.04 5)
2 .54 (.10 0)
3X
0.93 (.0 37) 0.69 (.0 27)
0.36 (.014) M B A M
3X
0.55 (.02 2) 0.46 (.01 8)
2.92 (.115) 2.64 (.104)
2X N O TE S:
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : I.
IRL3803 Datasheet
