PTFA092211FL, PTFA092211EL - Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Datasheet Details

Part number	PTFA092211FL, PTFA092211EL
Manufacturer	Infineon
File Size	442.53 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA092211EL_Infineon.pdf
Note	This datasheet PDF includes multiple part numbers: PTFA092211FL, PTFA092211EL. Please refer to the document for exact specifications by model.

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =.
37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P.
1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output p.

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Published: Aug 6, 2013 |