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PTFA092211FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA092211FL datasheet PDF. This datasheet also covers the PTFA092211EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PTFA092211EL_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA092211FL
Manufacturer Infineon
File Size 442.53 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA092211FL Datasheet

General Description

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA signal, PAR = 6.5 dB, 5 MHz carrier spacing 40 35 -20 -25

Overview

PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960.

Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output p.

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